32GB (x72, ECC, DR) 288-Pin DDR4 RDIMM Features CCMTD-1725822587-9795. The G. 9 CMT32GX5M2X7600C36 GIGABYTE Z790 Aorus Master (1. Find technical product specifications, features and more at Samsung Semiconductor. 7 nm vs. Details. This module is compliant to specifications for DDR5-4800 Registered DIMM performance in Intel® platform systems. Samsung’s latest V-NAND solution is the V6, with the V7, V8, V9 and Vxx models forecasted for future development. The cutting-edge speed enables huge transfers to be made at. The new LPDDR5 memory. No patent licenses are implied. Without the datasheet for these ICs, at this time, it is recommended not to exceed 1. The purpose of this Standard is to define the minimum set of requirements for JEDEC compliant 8 Gb through 32 Gb for x4, x8, and x16 DDR5 SDRAM devices. This specification defines the electrical and mechanical requirements for 262-pin, 1. In terms of specifications, the Samsung 512 GB DDR5 memory offers twice the performance of the DDR4 memory with speeds of up to 7200 Mb/s. The 5RCD0148HC2 (RCD) is a registering clock driver used on DDR5 RDIMMs and LRDIMMs. The device is produced using. Lee 1. The solution enables you to achieve new levels of productivity, efficiency, and measurement reliability. . display technology. The on-DIMM PMIC further boosts power management efficiency and. A new stage of high-performance. in the memory cards and modules, memory modules category. Clock Rate. Description DDR5 RDIMM Part Number Density Data Rate DIMM Organization Number of DRAM Number of rank side ECC SQR-RD5N32G4K8SZZB (Samsung 2Gx8(16Gb) B-die) 32GB 4800 MT/s 4Gx80 20 2. 採用 SAMSUNG 記憶體顆粒編號為 K4RAH086VB-BVQK，開首的 K 代表 SAMSUNG Memory、4 代表是 DRAM 產品， R 代表 DDR5 系統記憶體、 AH08 代表容量是 16Gb (2Gb x 8) 顆粒 ，緊接編碼為 6 代表 32 Banks 顆粒，V 代表工作電壓採用 PODL_11 介面， vDD、vDDQ 工作電壓均為 1. 1x 16GB 2. Now 1. Samsung is also working with data center and cloud providers around the world to better accommodate the need for greater memory. In 2018, Samsung delivered the industry’s first 8Gb LPDDR5 DRAM and today, the company is aggressively moving beyond mobile markets with the first 16Gb LPDDR5X DRAM. DIMM densities start at 2 GB, reaching up to 128 GB – a big leap from DDR3’s 512 MB to 32 GB. SKILL Trident Z5 DDR5 memory F5–5600U3636C16GX2–TZ5K includes Samsung DDR5 K4RAH086VB–BCQK devices (K4RAH046VB die). 45 36-46-46-82 32GB 2 Dual LGA1700 Corsair Core™ i9-13900K DDR5 0. We found both of the latter two devices. 50. Optional clock gating available for low-power control. double down on performance, combining high. DDR5 SODIMM. Datasheet, Device Operation, Part number Decoder, Label information, SPD, EOL, Chip information. UDIMMs). Image Sensor ISOCELL HMX ISOCELL GH1. Revision History. Product type: RAM Memory Manufacturer: Samsung Part number: M425R1GB4BB0-CQK Condition: new Capacity: 8GB Kit: 1x 8 GB Standard / Generation: DDR5 Rank: 1Rx16 Type of memory: SO-DIMM ECC Support: No24Gb DDR5 chip samples are now available from SK hynix. 1V. In this paper, we provide further detail about key aspects of the DDR5 dual in-line memory module (DIMM) and advantages over DDR4. 2 GB/s. Offers higher frequencies, greater bandwidth. 1 Volts. Samsung DDR5 Memory (Image credit: Samsung) Samsung has announced at Hot Chips 33 that the company has developed the industry's first DDR5. The reduced power consumption gives substantial power savings and allows operation at higher speeds without higher power and cooling requirements. The 8Gb LPDDR5 boasts a data rate of up to 6,400 megabits per second (Mb/s), which is 1. The manual is available as a PDF file for easy download and reference. 2 GHz P-Core Turbo: MotherboardM425R1GB4BB0-CQK(DDR5). Use Samsung Semiconductor's product support tools to find technical resources that gets you straight to the information you need on. Notes: 1. Next-generation memory for computing applications; Equipped with diverse features for higher. The same modules specified at Dell, HP, IBM and other OEMs. 0. Operating Temp. MSRP: $179. Pin Front Pin Back Pin Front Pin Back Pin Front Pin Back 1 VREFDQ 121 VSS 42. Oct. I/O pads with impedance calibration logic and data retention capability. Part numbers are listed as they appear on the chips, without the ED prefix. View all. 1 Updated MR9 table on page 63. com, Tel : 82-31-208-6432 (. datasheet LPDDR4 SDRAM Rev. UDIMMs). DRAM is designed with a simple technique because it only requires a single transistor compared to around six in a typical static RAM, SRAM memory cell. With exceptional transfer speeds of up to 7,200 Mbps, DDR5 effectively handles the ever-increasing demands of larger, more complex data workloads. Boost the performance and functionality of your system with the Samsung DDR5 RDIMM Server Memory. M. The memory features a total of 40 DRAM chips with. Now 1. Application. DDR3 SDRAM MEMORY ORDERING INFORMATION 51 : 512Mb 1G : 1Gb 2G: 2Gb 4G: 4Gb 8G: 8Gb 04: x 4 08: x 8 16 : x16 33 : x32 3 : 4 Banks 4 : 8 Banks 5 : 16 Banks 3. Samsung M425R1GB4BB0-CQK 8GB DDR5 4800MHz SODIMM Memory. LPDDR3 SDRAM. Not all options listed can be combined to define an offered. 35V. In this instance, the PMIC. With its 12nm-class 32Gb DDR5 DRAM as a foundation, Samsung plans to continue expanding its lineup of high-capacity DRAM to meet the current and future demands of the computing and IT industry. DDR5 and GDDR6) in line with the demands of global. The data sheet provides detailed information on the features, specifications, pin assignments, and timing diagrams of the device. M 1st 8-9) Speed EB 4800 40-39-39 10) Module Type U UDIMM S SODIMM E ECC UDIMM A ECC SODIMM 11) Extra Info. New 3D printing method creates a working robot hand with a single run — One step closer to printing missing limbs at home. Samsung is famous for designing and manufacturing flash memory and DRAM chips, having a speed of 4800MHz, and a 16Gb of storage capacity, this is one of the most reliable memory chips you can buy today. 0/F5h) 04. Small Outline Dual In-line Memory Module. Samsung Electronics. Unleash creative spirit with GDDR5's up to 9Gbps processing speed and 25% less power consumption in graphics performance in servers, workstations, and PCs. Lee - Correction of typo Get Lifetime warranty Great savings Buy factory original SAMSUNG M321R8GA0BB0-CQK memory modules. Width. Extreme innovation for stable performance. A new level of speed, improved capacity, and bolstered reliability are packed into DDR5 to enhance overall system performance. DDR5/4/3 training with write-leveling and data-eye training. Each one of these devices (functions) has its own JEDEC specification. Key Features. 1V (VDD) double data rate, synchronous DRAM, registered dual in-line memory. $124. 95. DDR5-4800 4. Boost the performance and functionality of your system with the Samsung DDR5 RDIMM Server Memory. Each module kit supports AMD® EXPO v1. Indeed, we've already seen DDR5 pricing fall precipitously from sky-high territory since 2021. View full DDR5 DRAM part catalog. Get Lifetime warranty Great savings Buy factory original SAMSUNG M323R2GA3BB0-CQK memory modules. These parameters represent the logical address state of the CA bus for. Remark. The new LPDDR5 is around 1. H5GQ1H24AFR Datasheet (HTML) - Hynix Semiconductor Similar Part No. Unleash creative spirit with GDDR5's up to 9Gbps processing speed and 25% less power consumption in graphics performance in servers, workstations, and PCs. Samsung Teases 512 GB DDR5-7200 Modules. com, a global. “Our 12nm-range DRAM will be a key enabler in driving market-wide adoption of DDR5. Find technical product specifications, features and more at Samsung Semiconductor Europe, the Middle East, and Africa. The cutting-edge speed enables huge transfers to be made at 51. The G. DRAM. - 2 - Product Guide DDR3 SDRAM Memory Oct. In comparison to DDR4, Samsung's DDR5-7400 memory. DDR5 adds a burst length of 32 option specifically for x4-configured devices. Price (USD): $30. Warranty. DDR5 Registering Clock Drivers (RCD), Serial Presence Detect Hubs (SPD Hub) and Temperature Sensors (TS) are. DDR4 modules are more energy-efficient, operating only at 1. Crucial DDR5 takes an extreme step forward in engineering over the previous generation with two independent 32-bit channels per module for optimized performance 7. 5v 170-pin fbga. DDR5 RDIMM core data sheet •288-pin, DDR5 registered dual in-line memory module (DDR5 RDIMM) •Fast data transfer rate: PC5-5600 •32GB (4Gig x 80) •Single-rank •32 internal banks; 8 groups of 4 banks each Figure 1: 288-Pin DDR5 RDIMM (R/C-C0) Notes: 1. 32GB RAM Replacement for Samsung M425R4GA3BB0-CQK | DDR5 4800MHz PC5-38400 SODIMM 2Rx8 Laptop Memory. Samsung's first 16Gb GDDR7 device features a data transfer rate of 32 GT/s and therefore boasts a bandwidth of 128 GB/s, up significantly from 89. in this next-level package. Features • DDR5 functionality and operations supported as defined in the component data sheet. It’s the industry’s first low-power DDR5 shipped in mass production. 5v 170-pin fc-fbga. This module is compliant to specifications for DDR5-4800 Registered DIMM performance in Intel® platform systems. Crucial DDR5 takes an extreme step forward in engineering over the previous generation with two independent 32-bit channels per module for optimized performance 7. This will result in much cheaper manufacturing costs as well as a. com, a global distributor of electronics components. 1 V to the DIMM ICs. So, the number would be 40 chips, whereas a non. SODIMM DDR5 4800 8G Page 4 of 21 1. Samsung M323R4GA3BB0-CQK 32GB DDR5-4800 PC5-38400 4800MHz UDIMM Non-ECC Unbuffered DIMM 288-Pin 2Rx8 1. 0°C to 85°C. This shifts power integrity to the DDR5 module level and away from the motherboard. 87. , Ltd. The transfer speed of the LPDDR5 is 51. The 8Gb LPDDR5 boasts a data rate of up to 6,400 megabits per second (Mb/s), which is 1. In doing so, Samsung puts us one big step closer to faster and cheaper RAM kits flooding the market. Find technical information and end-of-life data on SK hynix products. Features Key Parameter Industry Nomenclature (ns) tCK tRAS (ns) tRCD (ns) tRP (ns) tRC (ns). Sep. Find technical product specifications, features and more at Samsung Semiconductor. 2 gigabits per second (Gbps). Samsung 16GB DDR5 SDRAM Memory Module - For Notebook - 16 GB (1 x 16GB) - DDR5-4800/PC5-38400 DDR5 SDRAM - 4800 MHz Single-rank Memory - CL40 - 1. These parameters represent the logical address state of the CA bus for different. La tecnología. 1 Registered DIMM 4. SKU: CCM323R2GA3BB0CQK Weight: 0. 3 Products selected for comparison. DOWNLOAD. 日本 / 日本語 Products Solutions News & Events Sustainability Support About Us Global DRAM DDR Overview DDR5 DDR4 DDR3 Trusted reliability Fast data transfers for a. Corsair's Vengeance RGB DDR5-6000 32GB dual-channel RAM kit offers impressive 10-zone lighting, but our testing showed performance could be better. Samsung Electronics's K4G41325FC-HC28 is a gddr5 sdram chip. 1V. These DDR5 UDIMMs are intended for use as main memory when installed in PCs. Samsung M323R2GA3BB0-CQK DDR5-4800 MHz 16GB (1x 16GB) Single Rank x8 PC5-38400R OEM NON-ECC. RDIMM DDR5 4800 32G Page 4 of 25 1. Buy 16GB DDR5 4800MHz UDIMM PC5-38400 CL40 1Rx8 1. 1v Module Notebook Laptop RAM Memory Upgrade M425R4GA3BB0-CQK Adamanta . 0 x16 link, allowing for a theoretical bidirectional 32 GT/s, but with multiple TB of. In view of its simplicity, It allows for great integration density levels. defined in the component data sheet •Features and specifications defined in the Micron DDR5 RDIMM core data sheet •288-pin, DDR5 registered dual in-line memory module (DDR5 RDIMM) •Fast data transfer rate: PC5-5600 •32GB (4Gig x 80) •Single-rank •32 internal banks; 8 groups of 4 banks each Figure 1: 288-Pin DDR5 RDIMM (R/C-C0) Notes: 1. 0. ompared to its predecessors, this module provides a significant speed boost, higher capacities, reduced power consumption, and increased. 10 V - Non-ECC - Unregistered - 262-pin - SoDIMM. * Compared to LPDDR4X at 1. Limited lifetime warranty. Micron Plans HBM4E in 2028, 256GB DDR5-12800 RAM Sticks in 2026 Latest AMD's Ryzen 9 7950X3D is now 20% off for Black Friday 2023, an incredible price for Intel-beating gaming with a monstrous 16. Samsung's new Power Management ICs for DDR5 memory modules. Later this month, Samsung plans to unveil an updated version of its open-source Scalable Memory. The latest buzz on next-generation memory is DDR5, the successor of DDR4. 1. Power management (PMIC) moves from the motherboard to the. GDDR5 K4G80325FC-HC25(8Gb). Check part details, parametric & specs updated 13 NOV 2023 and download pdf datasheet from datasheets. Be the first to review this product. 2018 1. 0 Initial Datasheet Released. Find technical product specifications, features and more at Samsung Semiconductor. With the increased transfer rate, the new LPDDR5 can send 51. Advantech 16G DDR5-4800 288Pin 2GX8 1. Weight: 0. Check part details, parametric & specs and download pdf datasheet from datasheets. Find technical product specifications, features and more at Samsung Semiconductor. Samsung Electronics has developed its D1z 8GB DDR4,. The key to a successful laptop RAM upgrade is to check with the manufacturer for RAM requirements, then choose SO-DIMMs with a code that matches exactly. With a data rate (speed) range of 4800 to 8800MT/s, DDR5. The company specifically concentrated on DDR5-4800 memory, which is the baseline standard for Alder Lake. Content in this 24Gb Die Revision B DDR5 SDRAM data sheet addendum supersedes content defined in the core data sheet. Registered DIMM Pin Configurations (Front side/Back side) NOTE: NC = No internal Connection SAMSUNG ELECTRONICS CO. SAMSUNG: 1x 16GB: DDR5-4800: RDIMM: Request For Quote: M321R2GA3BB6‐CQK: SAMSUNG: 1x 16GB: DDR5-4800: RDIMM $ 68: Buy Now: M323R4GA3BB0‐CQK: SAMSUNG: 1x 32GB: DDR5-4800: UDIMM $ 88: Buy Now: M323R4GA3DB0‐CWM:. Quantity: Decrease Quantity: Increase. Key features • Supports 52 measurements of DDR5 System Transmitter Tests as per DDR5 JEDEC specification: • 21 Clock measurementsM425R1GB4BB0-CWM(DDR5). In Store ( view ) $35. Programmable per-bit (PVT compensated) deskew on read and write datapaths. This module is compliant to specifications for DDR5-4800 Registered DIMM performance in Intel® platform systems. Find technical product specifications, features and more at Samsung Semiconductor US. M321RAGA0B20-CWK(DDR5). For systems with limited space issues. Find technical product specifications, features and more at Samsung Semiconductor. Micron applied its M-D1z process technology node, while Samsung and SK Hynix adopted D1y cell processes (S–D1y and H–D1y). com, a global. The industry-leading process technology nodes are D1a or D1α to date. Package. Designed for the latest high-performance systems. DDR5 SDRAM modules benefit from DDR5 SDRAM's use of an 16n-prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. The tech giant announced the development. 1 operating voltage. Samsung 1x16GB DDR5 4800MHz 262-Pin DDR5 SO-DIMM NON-ECC Notebook Memory Laptop Memory, M425R2GA3BB0-CQK. DDR2-1066 7-7-7 DDR2-800 5-5-5 DDR2-800 6-6-6 DDR2-667 5-5-5 Package:K3LK2K20BM-BGCN. For general Micron DDR5 SDRAM specifications, see the Micron DDR5 SDRAM Core Product Data Sheet. Mobility Innovation. 1V) and VPP (1. M425R1GB4BB0-CQK(DDR5). • Differential clock inputs (CK and CK) • DLL aligns DQ and DQS transition with CK transition. 19 150 x 67 x 15. All Images. 1V and measures 76. samsung. “We are. com. M323R4GA3DB0-CWM (DDR5). Check part details, parametric & specs updated 09 OCT 2023 and download pdf datasheet from datasheets. Designed for the latest high-performance systems. Additional Info. Each and every memory module is validated and Supermicro certified to ensure performance and reliability. Compared to Micron Technology’s competing D1z cell design, Samsung further reduced cell size (Samsung is at 0. 5 Unbuffered SODIMM Revision History Revision No. Designed with on-die ECC (ODECC) 8 at the component level for long-term stability, Crucial DDR5 is engineered to maintain the. Table 2: Part Numbers and Timing Parameters – 64GB Modules Base device: MT60B4G4,1 16Gb DDR5 SDRAM Die Revision A Notes:1. Stronger Performance and Speed With 16Gb or 24Gb DDR5, UDIMM speed has jumped to 5,600Mbps and more from the 3,200Mbps on DDR4. Already, data centers consume around 1% of global energy production, and this figure was set to grow by a factor of 40 over the next 10 years – unless the sector makes big changes. The same modules specified at Dell, HP, IBM and other OEMs. M321R8GA0BB0-CQK(DDR5). Samsung D1z LPDDR5 chips. 1V) Operating Environment: 0°C ~ 95°C (Tc) Anti-Sulfuration Protection Against Harsh Environments. Leveraging the latest DDR5 standard, Samsung’s 12nm-class DRAM will help unlock speeds of up to 7. DDR5 RAM will start appearing in more and more of the best gaming PC builds once AMD’s Zen 4 and Intel’s Alder Lake CPUs come to market later this year and. reserves the right to change products and specifications without notice. Supermicro certified to ensure performance and reliability. Find technical product specifications, features and more at Samsung Semiconductor. 1. PC3-12800 SODIMM. Memory 128GB DDR5-4800MHz 288-pin. DDR5-5200. The DDR5 memory chip described by SK Hynix is a 16 Gb device (organized in 32 banks and 8 bank groups) that features a 6400 MT/s interface transfer rate at 1. dimm. Refresh Commands In addition to the standard ALL-BANK REFRESH command (REFab) available on DDR5 and earlier DDR SDRAM products, DDR5 introduces a SAME-BANK. In terms of specifications, the Samsung 512 GB DDR5 memory offers twice the performance of the DDR4 memory with speeds of up to 7200 Mb/s. 1. DDR5 achieves 30% greater power efficiency than DDR4 through improved performance and power reduction. Boost the performance and functionality of your system with the Samsung DDR5 RDIMM Server Memory. Notes: 1. Micron used ArF-i based lithography for all. Samsung Solid State Drive. 10 V - Non-ECC - Unregistered - 260-pin - SoDIMM Samsung 8GB DDR5 SDRAM Memory Module. Actual product. SEOUL, South Korea-- ( BUSINESS WIRE )--Samsung Electronics Co. Samsung M321R4GA3BB6-CQK Memory 32GB DDR5 4800MHz RDIMM - MEM-DR532L-SL05-ER48. I'm sure they can do the same with LPDDR5X and raise the maximum allowed speeds. 8V), with optional 4th Output (VDD2). The cutting-edge speed enables huge transfers to be made at 51. 4 GT/s. Samsung 1x8GB DDR5 4800MHz PC5-38400 SO-DIMM NON-ECC OEM Memory M425R1GB4BB0-CQK. This same connector can be used for PCIe. Micron DDR5 SDRAM: New Features," which highlighted key fifth-generation double data rate (DDR5) SDRAM features and functionality that deliver significant performance improvements over DDR4. Y. Best sellers of Desktop Memory. 4% a year. 0 - First version for target specification. 1 / 3. 8GT/s; Same-Bank Refresh; On-die ECC for Enhanced RAS; Datasheet (PDF) Buy Online Configure System. 4 36-48-48-121 32GB 2 Dual LGA1700 G-Skill Core™ i9-13900K DDR5 0. Its operating voltage is 1. Release 27th Jun. GDDR5 K4G80325FB-HC25 (8Gb). It is capable to refresh and delete itself while processing. These parameters represent the logical address state of the CA bus. 1V), VDDQ (1. DRAM Type 4. Going beyond the performance limitations of existing DRAMs, DDR5 will be pivotal in leading data-driven innovation in terms of speed, capacity and eco-friendliness. 5 times faster than the previous generation*, Samsung's LPDDR5 reaches a pin speed of 6,400 Mbps**. Height. Samsung Electronics's K4G80325FC-HC25 is a dram chip gddr5 sdram 8gbit 256mx32 170-pin fbga. Brand. com SAMSUNG - 2 - K4E8E324ED-EGCG datasheet LPDDR3 SDRAM Rev. 5″ U. S) form factor — especially suitable for next-generation high-capacity enterprise servers and data centers. 16GB DDR5, Low Profile ECC Registered DIMM. Samsung Electronics's M321R4GA0BB0-CQK is a ddr5, 32gb, 1rx4, rdimm, 4800mhz, 1. # of Internal BanksM321R4GA0BB0-CQK(DDR5). User experiences of 5G, AI, advanced camera technology and display options are taken to the next level, and future UX experiences are made today's reality. 00. 99 –京东jd. Boost the performance and functionality of your system with the Samsung DDR5 RDIMM Server Memory. 2 Internal Solid State Drive Memory Card + 2mo Adobe CC Photography, Maximum Speed, Thermal Control (MZ-V8P1T0B)SODIMM M471A4G43MB1-CTD(DDR4). 3 drive bays in the next generation. K4G10325FE-HC05 - Datasheet. 2016 1. This is an E3 2x form factor that is intended to take over for 2. 1V of power, exceeding the industry standard of 1. Buy Samsung 32GB DDR5 4800MHz PC5-38400 ECC RDIMM 1Rx4 (EC8 10x4) Single Rank 1. In comparison to DDR4, Samsung. Release 23th Jun, 2016 - J. com, a global. All part numbers end with a two-place code (not shown) that designates component and PCB revisions. The 8Gb LPDDR5 boasts a data rate of up to 6,400 megabits per second (Mb/s), which is 1. Skill teases its upcoming Trident Z DDR5. Chinese (zh-cn)_2023_SAMSUNG Memory Card, UFD Warranty Statement (PRO Endurance excluded)_v1. Feb 2004. 0 COMPARISION BETWEEN LPDDR3 AND LPDDR4 Items LPDDR3 LPDDR4 Feature CLK scheme Differential (CLK/CLKB) å Data scheme DDR Single-ended, Bi-Directional å DQS scheme Differential (DQS/DQSB), Bi-Directional å ADD / CMD scheme DDR SDR State Diagram Refer to the Datasheet Refer to the Datasheet Now 1. Content in this 16Gb Die Revision A DDR5 SDRAM data sheet addendum supersedes content defined in the core data sheet. DDR5 memory uses 13% less energy than the previous generation, and that is especially important as the global data center market is growing at a rate of 6. in the memory chips, dram chip category. The data sheet. * 삼성전자는 사전 통지 없이 언제라도 제품 이미지와. Example: MTA36ASF4G72PZ-3G2R1. 2v Ddr5 Sdram 288-pin Rdimm Memory Module. FREE Returns . Y. For other inquiries related to standards & documents email Angie Steigleman. RDIMM DDR5 4800 16G Page 4 of 24 1. 1v. Skill Trident Z5 32 GB DIMM desktop. Samsung Electronics's K4G41325FC-HC28 is a gddr5 sdram chip. M425R2GA3BB0-CQK(16 GB). Find technical product specifications, features and more at Samsung Semiconductor. Samsung DDR5 IC packing 16GBx2 kits will launch at up to DDR5 6400 CL 36 speeds. datasheet DDR4 SDRAM Rev. 5 x 2 x 8 in;Short-Form Datasheet PMIC for Client DDR5 Memory Modules. Figure. Consult factory for current revision codes. DDR5 ushers indata-centric innovation. 5x faster than the LPDDR4x in terms of data transfer. SODIMM. K4E6E304ED-EGCG. Designed with on-die ECC (ODECC) 8 at the component level for long-term stability, Crucial DDR5 is engineered to maintain the. DDR5 offers faster speeds, immediately delivering an 85% or higher increase in performance over DDR4. 1 / 3.